Semiconductor News & Analysis Feed
20 articles
2026-08-09
2026-07-24
2026-07-19
www.japantimes.co.jp
2026-07-19
2026-07-08
www.openpr.com
2026-07-08
Market research forecasts that the silicon carbide (SiC) diode market in power factor correction (PFC) applications will grow at an 11.5% compound annual growth rate through 2032. This growth trend is primarily driven by rapid development in electric vehicles, industrial power supplies, and renewabl
2026-06-23
chargedevs.com
2026-06-23
ROHM's introduction of TO-247-class cooling for surface-mount SiC MOSFET packaging represents a significant advancement in power semiconductor technology for electric vehicles. This innovation addresses critical thermal management challenges in high-power applications, enabling more efficient power
2026-06-23
simplywall.st
2026-06-23
ROHM (TSE:6963) has recently launched a new series of 80V power MOSFETs for 48V automotive power systems, signaling a strategic shift in its power device portfolio. These devices feature compact HPLF5060 and DFN3333 packages, enhanced thermal dissipation, and AEC-Q101 qualification, with mass produc
2026-06-18
simplywall.st
2026-06-18
This article examines AIXTRON SE's strategic positioning in the gallium nitride (GaN) market, driven by a recent partnership with ROHM Semiconductor. ROHM has installed AIXTRON's G10-GaN deposition system at its Hamamatsu plant to enable in-house 8-inch GaN epitaxy for 650V and 100V power devices. T
2026-06-17
news.google.com
2026-06-17
2026-06-16
simplywall.st
2026-06-16
AIXTRON (XTRA:AIXA) has attracted significant market attention due to its partnership with ROHM Semiconductor and the surge in demand for AI computing power. ROHM's decision to deploy AIXTRON's G10-GaN equipment for in-house gallium nitride epitaxy has intensified investor interest in the company. T
2026-06-15
simplywall.st
2026-06-15
ROHM (TSE:6963) has made notable strides in the power semiconductor space, particularly through its advancements in silicon carbide (SiC) technology. The company recently introduced the TSC3PAK surface-mount package for SiC MOSFETs, targeting applications in xEV onboard chargers, electric compressor
2026-06-12
www.ad-hoc-news.de
2026-06-12
Rohm's SCT4013DLL 750V SiC MOSFET is a high-efficiency power device tailored for modern data centers, particularly AI server battery backup units (BBUs) and industrial systems. Built on silicon carbide technology, it offers low conduction losses, high switching frequencies, and compact packaging, ma
2026-06-12
www.eenewseurope.com
2026-06-12
ROHM has introduced the TSC3PAK, a top-side cooling package for SiC MOSFETs designed for high-voltage power conversion in electric vehicles and industrial systems. This surface-mount package (14.00 × 18.58 × 3.50 mm) combines automated mounting with enhanced heat dissipation, approaching the perform
2026-06-11
www.automotivepowertraintechnologyinternational.com
2026-06-11
ROHM has introduced the TSC3PAK cooling package for SiC MOSFETs, featuring a top-side heat dissipation design that matches the thermal performance of conventional through-hole packages (TO-247-4L) while enabling automated surface-mount assembly. This advancement is particularly beneficial for power
2026-06-10
www.semiconductor-today.com
2026-06-10
ROHM has launched a new top-side-cooling SiC MOSFET package, the TSC3PAK, designed to enhance power conversion efficiency and reliability in applications such as electric vehicle onboard chargers and compressors. By enabling automated mounting while maintaining heat dissipation performance comparabl
2026-06-10
www.manilatimes.net
2026-06-10
ROHM has launched a new TSC3PAK package for SiC MOSFETs, featuring a top-side cooling design that enables automated mounting while matching the heat dissipation performance of conventional through-hole packages like TO-247-4L. This innovation is particularly significant for electric vehicle applicat
2026-06-10
www.marketscreener.com
2026-06-10
ROHM's launch of a new top-side cooling package for SiC MOSFETs represents a significant advancement in power semiconductor technology, particularly for high-power applications in electric vehicles, industrial power supplies, and renewable energy systems. SiC MOSFETs are increasingly critical due to
2026-06-09
www.azom.com
2026-06-09
On June 9, 2026, Oxford Instruments, a leading provider of advanced plasma processing solutions for the compound semiconductor industry, announced that its advanced etch technology has enabled ROHM Co., Ltd. to achieve in-house 200mm wafer production of 650V gallium nitride (GaN) power devices. This
2026-06-09
www.bisinfotech.com
2026-06-09
ROHM's launch of the TSC3PAK SiC MOSFET package represents a significant advancement in power semiconductor technology, particularly for high-efficiency applications. The top-cooled design addresses critical thermal management challenges in power electronics, enabling better heat dissipation and imp
2026-06-09
www.electronicsmedia.info
2026-06-09
ROHM has introduced the TSC3PAK SiC MOSFET package in June 2026, aimed at enhancing efficiency and reliability in power conversion circuits for electric vehicles. The new package features a top-side heat dissipation structure that matches the thermal performance of conventional through-hole packages
2026-06-09
www.eenewseurope.com
2026-06-09
Japanese power semiconductor supplier ROHM Semiconductor is expanding its gallium nitride (GaN) manufacturing capabilities through a strategic partnership with German equipment maker AIXTRON. This collaboration enables ROHM to implement in-house GaN epitaxy at its Hamamatsu plant using AIXTRON's adv