ROHM adds top-side cooling package for SiC MOSFETs ... - eeNews Europe

ROHM has introduced the TSC3PAK, a top-side cooling package for SiC MOSFETs designed for high-voltage power conversion in electric vehicles and industrial systems. This surface-mount package (14.00 × ... Read original →

ROHM’s TSC3PAK top-side cooling SiC MOSFET package signals a pivotal shift from passive to engineered thermal pathways in power semiconductors. This forces substrate and TIM suppliers upstream to accelerate high-thermal-conductivity, low-CTE material development, while compelling inverter designers downstream to rethink layout architectures. Amid EU Battery Regulation and U.S. IRA localization mandates, the SMT-compatible design eases assembly but exposes supply chain fragility due to Japan’s constrained domestic packaging capacity. Infineon and STMicroelectronics will likely counter with comparable top-cooling variants within 6–9 months to defend automotive SiC share, while Wolfspeed may leverage this to push its vertically integrated wafer-to-module strategy. Within 18 months, top-side cooling will become the de facto standard for 800V traction inverters, with thermal performance eclipsing Rds(on) as the primary selection criterion.