ROHM launches new top-side-cooling package for SiC MOSFETs - Semiconductor Today

ROHM has launched a new top-side-cooling SiC MOSFET package, the TSC3PAK, designed to enhance power conversion efficiency and reliability in applications such as electric vehicle onboard chargers and ... Read original →

ROHM’s TSC3PAK isn’t just a packaging tweak—it’s a strategic pivot in the SiC MOSFET value chain. By enabling top-side cooling with surface-mount compatibility, it forces substrate suppliers to innovate high-thermal-conductivity insulators and compels inverter designers to rethink PCB thermal architectures. Crucially, its 6.66mm creepage distance aligns with EU battery regulations and U.S. IRA compliance demands, cutting insulation-related BOM costs for automakers. While Wolfspeed and Infineon cling to through-hole or HybridPACK formats, ROHM’s move pressures ST and Onsemi to accelerate dual-side-cooling commercialization. Within 18 months, as 800V EV platforms scale, automated-assembly-ready SiC modules will become Tier1 mandates—ROHM is seizing the inflection point where SiC shifts from raw performance to manufacturability-driven value.