Oxford Instruments Enables ROHM's In-House GaN Manufacturing with Advanced Etch Technology for 200 mm Production - AZoM

On June 9, 2026, Oxford Instruments, a leading provider of advanced plasma processing solutions for the compound semiconductor industry, announced that its advanced etch technology has enabled ROHM Co... Read original →

ROHM’s in-house 200mm GaN production marks a tipping point in the shift from silicon to wide-bandgap power semiconductors. Oxford Instruments’ ALE and Etchpoint™ solve critical uniformity and defect challenges on large-diameter GaN wafers, forcing upstream epitaxy and downstream packaging to recalibrate process specs. Strategically, this reduces reliance on U.S.- or Japan-sourced tools, mitigating export control exposure and strengthening supply chain sovereignty. Competitors like Infineon and STMicroelectronics will likely accelerate their own GaN fab plans or diversify equipment partnerships to counter ROHM’s lead in automotive-grade 650V devices. Over the next 12–24 months, GaN-on-200mm will become the de facto platform for EV onboard chargers and AI server PSUs, catalyzing a new ecosystem around MOCVD, metrology, and substrate suppliers.