Semiconductor News & Analysis Feed

257 articles
2026-06-10
digitimes.com 2026-06-10
Lens maker Largan Precision held its shareholders' meeting on June 9, where chairman Adam Lin, long known for his terse public remarks, appeared relaxed and offered unusually detailed views on the industry, technology, and Largan's own operations. His comments showed clear optimism toward the company's development of fiber array units (FAUs).
2026-06-10
www.eurasiareview.com 2026-06-10 Eurasia Review
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2026-06-10
www.newelectronics.co.uk 2026-06-10 New Electronics
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2026-06-10
www.newelectronics.co.uk 2026-06-10 New Electronics
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2026-06-10
www.newelectronics.co.uk 2026-06-10 New Electronics
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2026-06-10
www.marketscreener.com 2026-06-10 marketscreener.com
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2026-06-10
defence-industry.eu 2026-06-10 Defence Industry Europe
Northrop Grumman develops new GaN chip for secure W-band links and next-generation wireless connectivity By Martin Chomsky (Defence Industry Europe) INDUSTRY SPOTLIGHT | June 9, 2026 Photo: Northrop Grumman. Northrop Grumman has developed a new Gallium Nitride chip designed to improve performance for military and commercial radio frequency applications. The company said the chip sets a new sta
2026-06-10
www.indexbox.io 2026-06-10 IndexBox
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2026-06-09
www.thehindubusinessline.com 2026-06-09 BusinessLine
AGNIT Semiconductors, an indigenous Gallium Nitride (GaN) semiconductor start-up, has officially opened a new 350-square-foot advanced testing laboratory at the Indian Institute of Science (IISc) in Bengaluru. Financed through a ₹3 crore investment, the facility is designed to enhance domestic semiconductor testing and validation infrastructure, specifically tailored for high-power radio-frequency
2026-06-09
news.google.com 2026-06-09 iTWire
2026-06-09
analyticsindiamag.com 2026-06-09 Analytics India Magazine
Listen 5 min SHARE Save FOLLOW Preferred Source Google News WhatsApp Telegram KEY TAKEAWAYS What Actually Matters. AGNIT Semiconductors has launched a GaN testing lab at IISc with a ₹3 crore investment to enhance semiconductor validation. The facility aims to support high-power RF applications in telecom and defence by reducing reliance on external testing. More Bengaluru-based semiconductor s
2026-06-09
www.dagangnews.com 2026-06-09 DagangNews
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2026-06-09
www.azom.com 2026-06-09 AZoM
From Oxford Instruments Jun 9 2026 Oxford Instruments, a leading provider of advanced plasma processing solutions for the compound semiconductor industry, today announced its role in supporting ROHM Co., Ltd. as the company transitions 650 V gallium nitride (GaN) power device manufacturing in-house. ROHM brings 200 mm GaN device production in-house. Image Credit: Oxford Instruments By leveragin
2026-06-09
entrepreneur.economictimes.indiatimes.com 2026-06-09 Indiatimes
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2026-06-09
koreabizwire.com 2026-06-09 Koreabizwire
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2026-06-09
gagadget.com 2026-06-09 Gagadget.com
DJI is better known for drones than desk accessories, but the company just launched its first standalone GaN charger: the DJI Power 140W GaN Adapter. Priced at $30, it delivers 140W on each of two USB-C ports and takes direct aim at Anker and Baseus, which charge $40–50 for comparable hardware. Availability outside China hasn't been confirmed at major US or UK retailers yet. GaN (gallium nitride)
2026-06-09
www.streetinsider.com 2026-06-09 StreetInsider
onsemi (NASDAQ: ON) announced the launch of its GaNEXUS gallium nitride power portfolio, with initial sampling of devices across voltage ranges from 40V to 650V. The portfolio targets AI data centers, industrial automation, robotics, and energy infrastructure applications. The GaNEXUS lineup includes standard FETs and GaNEXUS Smart 650V devices with integrated protection features. According to th
2026-06-09
bluestudio.estadao.com.br 2026-06-09 Estadão Blue Studio
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2026-06-09
www.eenewseurope.com 2026-06-09 eeNews Europe
Japanese power semiconductor supplier ROHM Semiconductor is expanding its gallium nitride (GaN) manufacturing capabilities through a new production partnership with German equipment maker AIXTRON. The move will see ROHM bring GaN epitaxy in-house at its Hamamatsu plant in Japan using AIXTRON’s G10-GaN deposition platform.
2026-06-09
www.einnews.com 2026-06-09 EIN News
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