Semiconductor News & Analysis Feed
13 articles
2026-07-20
www.marketscreener.com
2026-07-20
2026-07-19
www.ad-hoc-news.de
2026-07-19
2026-07-05
news.google.com
2026-07-05
2026-06-18
simplywall.st
2026-06-18
This article examines AIXTRON SE's strategic positioning in the gallium nitride (GaN) market, driven by a recent partnership with ROHM Semiconductor. ROHM has installed AIXTRON's G10-GaN deposition system at its Hamamatsu plant to enable in-house 8-inch GaN epitaxy for 650V and 100V power devices. T
2026-06-17
www.ad-hoc-news.de
2026-06-17
Aixtron's AIX G10-SiC MOCVD system is designed to enhance production efficiency and cost-per-wafer for silicon carbide (SiC) power devices. Targeting 150mm and 200mm wafers, it supports automotive and industrial applications. Key advantages include higher throughput per cleanroom square meter, faste
2026-06-17
news.financial
2026-06-17
On June 17, 2026, the global semiconductor market is experiencing an unprecedented rally, driven primarily by the growing demand for computing power fueled by artificial intelligence (AI). Companies such as Infineon and Aixtron, which are leaders in power semiconductors and optoelectronics, have see
2026-06-16
simplywall.st
2026-06-16
AIXTRON (XTRA:AIXA) has attracted significant market attention due to its partnership with ROHM Semiconductor and the surge in demand for AI computing power. ROHM's decision to deploy AIXTRON's G10-GaN equipment for in-house gallium nitride epitaxy has intensified investor interest in the company. T
2026-06-09
www.eenewseurope.com
2026-06-09
Japanese power semiconductor supplier ROHM Semiconductor is expanding its gallium nitride (GaN) manufacturing capabilities through a strategic partnership with German equipment maker AIXTRON. This collaboration enables ROHM to implement in-house GaN epitaxy at its Hamamatsu plant using AIXTRON's adv
2026-06-09
www.tradingview.com
2026-06-09
German semiconductor equipment provider AIXTRON has announced that it will supply a G10 gallium nitride (GaN) deposition system to ROHM's Hamamatsu plant for in-house 8-inch GaN epitaxy, targeting production of 650V and 100V power device wafers. This move underscores the growing demand for high-effi
2026-06-08
www.marketscreener.com
2026-06-08
ROHM Semiconductor has partnered with AIXTRON to scale in-house gallium nitride (GaN) power device production using the G10-GaN platform. This strategic collaboration leverages AIXTRON's advanced GaN manufacturing technology to enhance ROHM's internal production capabilities for high-efficiency powe
2026-06-08
www.marketscreener.com
2026-06-08
ROHM Semiconductor's strategic partnership with AIXTRON SE represents a significant move in the power semiconductor sector, leveraging the G10-GaN platform to expand in-house gallium nitride device production. This collaboration underscores the growing importance of GaN technology in high-performanc
2026-06-03
news.financial
2026-06-03
This article explores the growing interconnection between nuclear energy and the semiconductor industry amid the rapid expansion of artificial intelligence (AI) and data centers. As AI drives a surge in electricity demand, nuclear power is re-emerging as a critical, clean, and reliable energy source
2026-06-02
www.ad-hoc-news.de
2026-06-02
Aixtron, a leader in gallium-nitride (GaN) equipment, has achieved record order intake driven by demand from AI-powered data centers. However, despite its market dominance in GaN tools—where its G10-AsP platform has become the industry standard—revenue has sharply declined, particularly in its silic