ROHM Semiconductor partners with AIXTRON to scale in-house GaN power device production using the G10-GaN platform - marketscreener.com

ROHM Semiconductor has partnered with AIXTRON to scale in-house gallium nitride (GaN) power device production using the G10-GaN platform. This strategic collaboration leverages AIXTRON's advanced GaN ... Read original →

ROHM’s partnership with AIXTRON is less about scaling capacity and more about vertically anchoring its GaN technology stack. By internalizing G10-GaN MOCVD processes, ROHM reduces reliance on foundries like TSMC and directly challenges the SiC-dominated EV supply chain. Geopolitically, this mitigates exposure to potential U.S.-EU export controls on advanced materials, though at the cost of high equipment depreciation. Competitors like Infineon and onsemi will likely accelerate in-house GaN line deployments, especially for 800V architectures. Within 18 months, GaN is poised to hit a performance-yield inflection point in fast chargers and onboard chargers (OBCs). Companies controlling the full stack—from substrates to devices—will dictate market pricing, signaling a shift toward ‘material-defined performance’ in power semiconductors.