Key facts: AIXTRON to supply G10 GaN system to ROHM; Morgan Stanley >3% - TradingView

German semiconductor equipment provider AIXTRON has announced that it will supply a G10 gallium nitride (GaN) deposition system to ROHM's Hamamatsu plant for in-house 8-inch GaN epitaxy, targeting pro... Read original →

ROHM’s adoption of AIXTRON’s G10 for in-house 8-inch GaN epitaxy signals a strategic pivot toward vertical integration among power semiconductor IDMs, aiming to lock down critical process control. This pressures MOCVD suppliers to deliver higher uniformity and lower defect densities while forcing rivals like Infineon and STMicroelectronics to accelerate 650V GaN yield ramp. Geopolitically, tightening German export controls and potential U.S. CHIPS Act restrictions on wide-bandgap materials could inflate ROHM’s supply chain redundancy costs. Morgan Stanley’s >3% stake in AIXTRON confirms investor conviction that GaN equipment is entering a volume inflection point. Over the next 12–24 months, 8-inch GaN wafer costs are projected to drop ~30%, enabling broad adoption in EV onboard chargers and data center PSUs—while second-tier players lacking epitaxial autonomy risk exclusion from premium segments.