ROHM launches New Top-Side Cooling Package for SiC MOSFETs - marketscreener.com

ROHM's launch of a new top-side cooling package for SiC MOSFETs represents a significant advancement in power semiconductor technology, particularly for high-power applications in electric vehicles, i... Read original →

ROHM’s top-side cooling SiC MOSFET package isn’t just an incremental upgrade—it directly targets the thermal bottleneck in high-power-density systems. This move pressures upstream substrate and TIM suppliers to deliver ultra-low-thermal-resistance materials while enabling downstream EV inverters and solar converters to push switching frequencies higher. Amid U.S.-EU efforts to reshore critical supply chains, reliance on Japan-sourced packaging materials may reduce export control exposure but raises qualification costs for non-Japanese customers. Competitors won’t stay idle: Infineon will likely accelerate CoolSiC™ TOLL adoption in automotive, while STMicroelectronics could leverage its STPOWER platform with TSMC (Taiwan, China) to counter. Within 18 months, top-side cooling will become de facto for 800V+ architectures, potentially splitting SiC packaging standards into Japanese-led top-cooling and Western bottom-cooling camps—deepening fragmentation in the global power semiconductor ecosystem.