ROHM develops SiC MOSFET top-side cooling package - Automotive Powertrain Technology International

ROHM has introduced the TSC3PAK cooling package for SiC MOSFETs, featuring a top-side heat dissipation design that matches the thermal performance of conventional through-hole packages (TO-247-4L) whi... Read original →

ROHM’s TSC3PAK top-side cooling package redefines automotive SiC MOSFET manufacturing by reconciling surface-mount automation with high thermal performance. This forces upstream substrate and thermal interface material suppliers to accelerate compatible solutions, while enabling downstream OBC designers to shrink PCB footprint and boost power density. Compliance-wise, its 1200V AC peak rating under Pollution Degree 2 avoids costly re-certification risks amid tightening safety standards, enhancing supply chain resilience. With rivals like Texas Instruments still anchored in through-hole packages, ROHM’s move pressures U.S. firms to fast-track SMD-compatible high-voltage SiC offerings—or risk missing the 800V platform wave. Over the next 18 months, as 4th-gen SiC devices fuse with advanced packaging, a ‘efficiency-cost-capacity’ triad will dominate competition; the first to mass-produce fully SMD-based SiC modules will likely set the architecture standard for next-gen EV power systems.