ROHM Launches New Top-side Cooling Package for SiC MOSFETs, Combining High Heat Dissipation with High Voltage Support - The Manila Times

ROHM has launched a new TSC3PAK package for SiC MOSFETs, featuring a top-side cooling design that enables automated mounting while matching the heat dissipation performance of conventional through-hol... Read original →

ROHM’s TSC3PAK isn’t just a packaging tweak—it’s a strategic pivot toward system-level SiC integration. By matching TO-247-4L thermal performance while enabling automated surface-mount assembly, it directly addresses automotive manufacturing’s yield-cost dilemma. This move forces upstream upgrades in substrate materials, thermal interface compounds, and reflow processes, accelerating the obsolescence of through-hole packages. Compliance-wise, its 6.66mm creepage distance precisely meets IEC 60664 Pollution Degree 2 for 1200V AC, reducing certification risk but raising barriers for smaller rivals. As Wolfspeed and Infineon scale 8-inch SiC wafers, ROHM counters with packaging differentiation—likely triggering competitor responses like clip-bond or double-sided cooling designs. Within 18 months, such high-density packages will expand beyond EV onboard chargers into PV inverters and AI server PSUs, pushing SiC adoption in non-inverter applications past the 30% inflection point.