ROHM TSC3PAK SiC MOSFET Package Enables High-Efficiency Power Design for EVs - Electronics Media

ROHM has introduced the TSC3PAK SiC MOSFET package in June 2026, aimed at enhancing efficiency and reliability in power conversion circuits for electric vehicles. The new package features a top-side h... Read original →

ROHM’s TSC3PAK isn’t just a packaging tweak—it redefines system integration logic for SiC power devices. By shifting heat dissipation to the top side, it eliminates reliance on through-hole mounting, enabling full SMT automation for automotive-grade power modules and slashing volume and assembly costs in OBCs and e-compressors. This forces upstream changes in PCB thermal design, reflow profiles, and EMI shielding. With EU high-voltage safety rules tightening, its 6.66mm creepage distance precisely meets Pollution Degree 2 requirements, sidestepping recertification risks—but raising compliance barriers for smaller rivals. Infineon and STMicroelectronics will likely fast-track compatible SMD SiC offerings, possibly bundling wafer capacity to lock in customers. If TSC3PAK influences the next AEC-Q101 revision within 18 months, it could trigger a ‘through-hole exit’ wave across xEV platforms, accelerating 800V adoption and further eroding IGBT relevance in mid-power applications.