Semiconductor News & Analysis Feed
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2026-06-05
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2026-06-05
All About Circuits
2026-06-04
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Semiconductor Today
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2026-06-04
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2026-06-04
Semiconductor Engineering
Reduce risk and improve outcomes during complex technology node transitions.
The growing compute demands of modern vehicles are forcing chipmakers to venture into new territory.
To deliver increased processor performance for engine and body control systems, one leading semiconductor supplier knew it had to move to an automotive-qualified FinFET technology process — a leap that would introduce si
2026-06-04
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2026-06-04
Semiconductor Today
ROHM’s 750V SiC MOSFET adopted in battery backup unit for AI servers
ROHM says that its 750V silicon carbide (SiC) MOSFET has been adopted in a BBU (battery backup unit) for AI server power supplies. With the rise of generative AI, AI server power systems are shifting to higher voltages and rapidly transitioning to HVDC (high-voltage direct current) architectures. In this environment, ROHM’s devi
2026-06-04
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2026-06-04
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2026-06-04
www.automotiveworld.com
2026-06-04
Automotive World
Silicon carbide is emerging as a primary performance arena for xEV inverter suppliers, with on-resistance now tied to vehicle range
June 4, 2026
Mitsubishi Electric will begin shipping samples of fifth-generation silicon carbide metal-oxide-semiconductor field-effect transistors (SiC-MOSFETs) in bare die form from late June. The devices target inverters for drive motors and eAxles in electrified
2026-06-04
markets.financialcontent.com
2026-06-04
FinancialContent
Mitsubishi Electric to Ship 5th-generation SiC-MOSFET Bare Die Samples
By:
Mitsubishi Electric Corporation
via
Business Wire
June 03, 2026 at 23:00 PM EDT
ⓘ This article is third-party content and does not represent the views of this site. We make no guarantees regarding its accuracy or completeness.
Industry-leading low on-resistance, approx. 25% less than existing products, enhances xEV power e
2026-06-04
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2026-06-04
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Mitsubishi Electric to Ship 5th-generation SiC-MOSFET Bare Die Samples
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2026-06-04
semiengineering.com
2026-06-04
Liz Allan
Time-sensitive networking and MACsec allow Auto Ethernet to handle safety-critical func...
2026-06-04
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2026-06-04
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2026-06-03
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2026-06-03
presseagentur.com
ROHM’s SiC MOSFET Adopted in BBU for AI Servers as HVDC Architectures Advance
Willich-Münchheide, Germany, June 03, 2026 – ROHM has announced that its 750 V SiC MOSFET has been adopted in a BBU (Battery Backup Unit) for AI server power supplies. With the rise of generative AI, AI server power systems are shifting to higher voltages and rapidly transitioning to HVDC (high-voltage direct current) a
2026-06-03
www.bisinfotech.com
2026-06-03
Bisinfotech
Home/ Data Center/Infineon Expands SiC Solutions for AI Data Centers
Infineon Expands SiC Solutions for AI Data Centers
Vaishali Chauhan June 3, 2026
2 minutes read
Infineon Technologies AG is expanding its CoolSiC JFET portfolio in response to growing demand from AI data centers and the shift towards solid-state power protection. With new devices, package options and configurations, the comp
2026-06-03
www.bisinfotech.com
2026-06-03
Bisinfotech
Home/ Semiconductor Component/ROHM’s SiC MOSFET Adopted in BBU for AI Servers as HVDC Architectures Advance
ROHM’s SiC MOSFET Adopted in BBU for AI Servers as HVDC Architectures Advance
Vaishali Chauhan June 3, 2026
2 minutes read
ROHM Co., Ltd. has announced that its 750 V SiC MOSFET has been adopted in a BBU (Battery Backup Unit) for AI server power supplies. With the rise of generative AI,
2026-06-03
www.moomoo.com
2026-06-03
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Is this a once-in-a-lifetime US bull market!? NVIDIA's Jensen Huang reveals the 'next mega trend'! What are the two key investment opportunities and the top-pick stock to watch?
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2026-05-28
www.eenewseurope.com
2026-05-28
eeNews Europe
Toshiba has started test-sample shipments of a 1200V trench-gate SiC MOSFET aimed at power supply systems in AI data centres. The TW007D120E is housed in a QDPAK top-side cooled package and is designed to support higher current capability, improved thermal performance and higher power density in the power stage.