Mitsubishi Electric to Ship 5th-generation SiC-MOSFET Bare Die Samples - FinancialContent

Mitsubishi Electric announced that it will begin shipping samples of its fifth-generation silicon carbide metal-oxide-semiconductor field-effect transistors (SiC-MOSFETs) in bare die form in late June... Read original →

Mitsubishi Electric’s fifth-gen SiC-MOSFET bare die launch will force upstream wafer suppliers to accelerate the 6-inch to 8-inch transition and push inverter designers toward higher switching frequencies. While its trench architecture sidesteps gate oxide reliability issues of planar designs, it demands extreme precision in EUV patterning and doping—limiting viable foundry partners to TSMC, STMicroelectronics, and a few others, heightening supply chain concentration risks amid U.S.-China tech decoupling. With the EU Battery Regulation and U.S. IRA mandating localized xEV supply chains, Mitsubishi must establish backend packaging in North America or Europe by 2027 or risk losing key OEMs. Infineon and onsemi will likely counter with cost-optimized SiC modules, while firms from Taiwan, China and mainland China may capture mid-to-low-tier segments. Within 18 months, SiC price wars will escalate from modules to bare dies, triggering industry consolidation.