Mitsubishi Electric to Ship 5th-generation SiC-MOSFET Bare Die Samples - The Daily Tribune News

Mitsubishi Electric has announced that it will begin shipping samples of its fifth-generation silicon carbide metal-oxide-semiconductor field-effect transistors (SiC-MOSFETs) in bare die form in late ... Read original →

Mitsubishi Electric’s fifth-gen SiC-MOSFET bare die launch ignites a new efficiency arms race in automotive power electronics. Its proprietary trench architecture cuts on-resistance by 25%, forcing upstream SiC substrate suppliers to accelerate the shift from 6-inch to 8-inch wafers for yield parity, while Tier-1s like Bosch must redesign gate drivers and thermal packaging. Although Japanese firms currently sidestep U.S.-EU export controls under the Chips Act and Critical Raw Materials Act, overreliance on wafer foundries in Taiwan, China or logistics hubs in Hong Kong, China heightens supply chain fragility. Competitors—Infineon and ROHM—will likely fast-track sixth-gen validation, while STMicroelectronics may leverage its joint venture with Sanan Optoelectronics to dominate mid-tier segments. Over the next 18 months, SiC cost curves will bifurcate sharply: leaders will fortify moats via structural IP, pushing laggards toward module-level commoditization.