ROHM’s 750V SiC MOSFET adopted in battery backup unit for AI servers - Semiconductor Today

With the rapid growth of generative AI, data center power consumption is rising sharply, prompting the industry to adopt high-voltage direct current (HVDC) architectures to reduce transmission losses.... Read original →

ROHM’s adoption of its 750V SiC MOSFET in AI server BBUs signals a decisive shift toward HVDC power architecture in data centers. Technically, this pressures upstream SiC substrate suppliers to ramp 6-inch+ wafer yields while accelerating downstream BBU modularization. Regulatory risks loom as the EU and U.S. fast-track 800V DC safety standards—delays in certification by foundries in Taiwan, China or Southeast Asia could inflate global compliance costs. Competitors like Wolfspeed and Infineon will likely accelerate 800V SiC rollouts, possibly undercutting prices to erode ROHM’s lead. Over the next 12–24 months, as AI rack power exceeds 100kW, SiC will dominate not just BBUs but also PDUs and rectifiers, creating a high-voltage ecosystem that excludes non-integrated power semiconductor players.