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2026-05-28
Toshiba SiC MOSFET samples support 800V AI data centres ... - eeNews Europe
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www.eenewseurope.com 2026-05-28 eeNews Europe
Toshiba has started test-sample shipments of a 1200V trench-gate SiC MOSFET aimed at power supply systems in AI data centres. The TW007D120E is housed in a QDPAK top-side cooled package and is designed to support higher current capability, improved thermal performance and higher power density in the power stage.
SiC MOSFETAI data centersPower managementToshibaSemiconductor devicesPower supply systemsData center infrastructureSiC technology
2026-05-28
Toshiba's new SiC MOSFET cuts on-resistance area by 58% for 1,200 V power stages in EV chargers - Charged EVs
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chargedevs.com 2026-05-28 Charged EVs
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SemiconductorSilicon CarbideMOSFETElectric VehicleChargerPower DeviceToshibaNew Energy
2026-05-26
Toshiba test-sampling 1200V SiC MOSFET - Electronics Weekly
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www.electronicsweekly.com 2026-05-26 Electronics Weekly
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2026-05-25
Toshiba Begins Shipping 1200V SiC MOSFET Samples for AI Data Center Power Systems - Machine Maker
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themachinemaker.com 2026-05-25 Machine Maker
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SiC MOSFETAI Data CenterPower SemiconductorToshibaPower ManagementSemiconductor DeviceData Center InfrastructureSiC Technology
2026-05-25
Toshiba Launches 1200V SiC MOSFET For AI Data Centres - The Exchange Asia
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theexchangeasia.com 2026-05-25 The Exchange Asia
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SiCMOSFETAI Data CentersToshibaPower SemiconductorSemiconductor DevicesData CenterArtificial Intelligence
2026-05-22
Toshiba starts test-sample shipments of 1200V trench-gate SiC MOSFET for AI data centers - Semiconductor Today
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www.semiconductor-today.com 2026-05-22 Semiconductor Today
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2026-05-22
Toshiba samples 1200V SiC MOSFET for AI data centers - Bisinfotech
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www.bisinfotech.com 2026-05-22 Bisinfotech
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2026-05-22
Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers - ANTARA News
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en.antaranews.com 2026-05-22 ANTARA News
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2026-05-21
Toshiba Ships 1200V SiC MOSFET Samples for AI Data Centers - World Business Outlook
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worldbusinessoutlook.com 2026-05-21 World Business Outlook
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2026-05-21
Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers – News Hub - Medianet News Hub
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newshub.medianet.com.au 2026-05-21 Medianet News Hub
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2026-05-21
Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers - The AI Journal
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aijourn.com 2026-05-21 The AI Journal
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2026-05-21
Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers - The AI Journal
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aijourn.com 2026-05-21 The AI Journal
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2026-05-21
Toshiba Ships 1200V Trench-Gate SiC MOSFET Samples - Let's Data Science
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letsdatascience.com 2026-05-21 Let's Data Science
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2026-05-21
Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers - StreetInsider
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www.streetinsider.com 2026-05-21 StreetInsider
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2026-05-21
Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers - Business Wire
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news.google.com 2026-05-21 Business Wire
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2026-05-21
Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers - 巴士的報
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www.bastillepost.com 2026-05-21 巴士的報
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2026-05-21
Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers - Eagle-Tribune
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www.eagletribune.com 2026-05-21 Eagle-Tribune
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2026-05-21
Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers - The Joplin Globe
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www.joplinglobe.com 2026-05-21 The Joplin Globe
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