Mitsubishi Electric to Start Shipping 5th-generation SiC-MOSFET Bare Die Samples in June; Shares Down 3% - marketscreener.com

Mitsubishi Electric announced that it will begin shipping fifth-generation silicon carbide MOSFET bare die samples in June 2026. While this represents a significant technological advancement in power ... Read original →

Mitsubishi Electric’s June 2026 shipment of 5th-gen SiC-MOSFET bare dies signals technical prowess but reveals strategic lag in automotive-scale production. Technologically, lower Rds(on) and switching losses could disrupt IGBT supply chains, pressuring OSATs in Taiwan, China and Japan. Geopolitically, tightening U.S.-EU export controls on wide-bandgap semiconductors may inflate BOM costs by over 5% if Mitsubishi relies on non-domestic SiC substrates. Competitively, Infineon and STMicroelectronics have already locked in Tesla and BYD, leaving Mitsubishi to chase Tier-2 automakers or industrial inverter niches. Over the next 12–24 months, the SiC market will enter a brutal triad of performance, yield, and pricing—eliminating players without vertical integration. The 3% stock dip reflects investor skepticism: can Mitsubishi bridge the lab-to-fab gap before capital dries up?