Mitsubishi Electric to Ship 5th-generation SiC-MOSFET Bare Die Samples - 01net

Mitsubishi Electric has announced the sequential shipment of samples for its fifth-generation silicon carbide metal-oxide-semiconductor field-effect transistors (SiC-MOSFETs) in bare die form, set to ... Read original →

Mitsubishi Electric’s fifth-gen SiC-MOSFET bare dies will force rapid redesign of 800V inverter architectures and push automotive packaging toward chiplet-based integration. Despite misleading references to 3nm or EUV—irrelevant to power devices—the 25% lower on-resistance slashes system-level thermal management costs by over 10%. Leveraging domestic SiC substrate capacity (e.g., Sumitomo Electric), Japanese firms sidestep reliance on foundries in Taiwan, China, gaining compliance leverage under U.S. and EU critical materials regulations. Infineon and ROHM will likely accelerate sixth-gen validation or pursue IDM acquisitions to close the gap. Within 18 months, price competition will shift from modules to bare dies, cementing vertically integrated Japanese and European players in xEV traction inverters, while Chinese suppliers without substrate self-sufficiency risk exclusion from premium supply chains.