Mitsubishi Electric samples fifth-gen SiC-MOSFET for xEVs - Automotive World

Mitsubishi Electric has announced the sampling of fifth-generation silicon carbide metal-oxide-semiconductor field-effect transistors (SiC-MOSFETs) for electric vehicle (xEV) inverter applications, se... Read original →

Mitsubishi Electric’s fifth-gen SiC-MOSFET isn’t just a 25% on-resistance improvement—it redefines power density limits for xEV traction inverters via a proprietary trench architecture. This forces upstream SiC substrate suppliers to accelerate 8-inch adoption and compels inverter designers to abandon legacy IGBTs. Amid U.S.-EU subsidies and China’s push for SiC localization, Japanese firms leverage deep materials expertise to build asymmetric resilience against supply chain fragmentation. Infineon and STMicro will likely fast-track their own trench-SiC roadmaps, while Wolfspeed may delay EUV integration at the 3nm node to preserve cost parity. Over the next 18 months, automotive SiC competition will pivot from pure performance to reliability-plus-cost optimization—favoring vertically integrated players like Mitsubishi in premium xEV segments.