ROHM SiC MOSFET powers next-generation AI server BBUs - Bisinfotech

ROHM has announced that its 750V silicon carbide (SiC) MOSFET is being integrated into battery backup units (BBUs) for next-generation AI servers, supporting the industry's shift toward high-voltage d... Read original →

ROHM’s integration of its 750V SiC MOSFET into AI server BBUs signals HVDC architecture’s rapid adoption in data centers. Technically, this forces upstream drivers and packaging materials to endure 175°C junction temperatures and ±400V stress, while accelerating the shift from battery-based to capacitor-based backup units. Regulatory pressure—especially the EU’s tightening PUE mandates—is compelling hyperscalers to adopt SiC earlier, though U.S. export controls may inflate compliance costs for Taiwan, China and Southeast Asian supply chains. Competitors like Wolfspeed and Infineon will likely counter with 800V SiC modules or GaN-SiC hybrids, while foundries such as Nexchip (TSMC-affiliated) may reallocate automotive SiC capacity. Within 12–24 months, HVDC-integrated BBUs will become standard in AI racks, driving >35% CAGR for EcoSiC-class devices and catalyzing a paradigm shift from AC redundancy to DC resilience in data center power design.