ROHM’s SiC MOSFET Adopted in BBU for AI Servers as HVDC Architectures Advance - presseagentur.com

With the rapid growth of generative AI, the demand for high-power, high-voltage power systems in AI servers is increasing, driving the adoption of high-voltage direct current (HVDC) architectures in d... Read original →

ROHM’s adoption of its 750V SiC MOSFET in AI server BBUs signals HVDC architecture’s transition from niche to mainstream in data centers. Technically, this forces co-design alignment between next-gen 3nm GPUs (using EUV) and power delivery systems—mismatched thermal and electrical interfaces risk localized thermal runaway. Regulatory pressure is mounting in the EU and U.S. on data center PUE and embodied carbon; while SiC cuts operational losses, its substrate supply remains concentrated in Japan and Taiwan, China, exposing OEMs to >15% cost volatility under export controls. Competitors like Infineon and Wolfspeed will accelerate 800V SiC module validation for NVIDIA’s GB200 platforms. Within 18 months, HVDC-SiC integration will scale beyond BBUs to rack-level ‘DC microgrids,’ dismantling legacy 12V/48V paradigms.