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New GaN-on-Si transistor withstands nearly 4kV before breakdown - Electronics Weekly

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www.electronicsweekly.com 2026-09-01

New GaN-on-Si transistor withstands nearly 4kV before breakdown - Electronics Weekly

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news.google.com 2026-09-01

TSMC Fully Upgrades 3DFabric Platform; CoWoS-Integrated Transistors Projected to Grow 48x by 2029 - finance.biggo.com

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finance.biggo.com 2026-09-01

EPFL's Charge-Balanced GaN Transistor Blocks 3.4 kV by Taming Electric Field Concentration - XenoSpectrum

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xenospectrum.com 2026-09-01

EPFL's POWERlab has developed a charge-balanced gallium nitride (GaN) transistor on silicon (GaN-on-Si) that achieves a blocking voltage of 3.4 kV. Published in Nature Electronics, this work introduces a dopant-free polarization super-junction (iPSJ) drift region that mitigates electric field concen

GaN transistor charge balancing GaN-on-Si electric field concentration power semiconductor power electronics semiconductor materials device structure design

New transistor brings high voltage to microchip scale - Tech Xplore

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techxplore.com 2026-08-28

Researchers Develop SiC Transistor That Operates at 600°C - Electropages

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www.electropages.com 2026-08-26

Electronics Breakthrough: SiC Transistor Withstands Extreme Heat - hi-Tech.ua

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hi-tech.ua 2026-08-25

Researchers at Kyoto University have achieved a significant breakthrough in semiconductor technology by developing a silicon carbide (SiC) transistor capable of operating reliably at extreme temperatures up to 600°C. This advancement surpasses conventional silicon electronics, which typically fail a

Silicon Carbide Semiconductor Technology High-Temperature Electronics SiC Transistor Electronic Breakthrough Japanese Research Transistor Design Thermal Stability

Arm's AGI CPU Packs Over 100 Billion Transistors Into Two Chiplets - XenoSpectrum

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xenospectrum.com 2026-08-25

Arm Dissects Its AGI CPU Which Is Tailor-Made For AI: Dual Chiplets With >100B Transistors, 136 Neoverse V3 Cores, Driving A $2B Demand In 2027-2028 - Wccftech

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news.google.com 2026-08-24

A silicon carbide transistor that operates at 600°C - Tech Xplore

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techxplore.com 2026-08-24

Xiaomi’s XRING 03 Goes Official On TSMC’s 3nm N3P Process, Sports 24 Billion Transistors, First Smartphone SoC To Support LPDDR6 RAM, All-Big-Core CPU Design & More - Wccftech

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wccftech.com 2026-08-24

Kyoto University builds transistor that survives 600C temperatures, compatible with standard fabs

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tomshardware.com 2026-08-24

Researchers at Kyoto University have developed a silicon carbide (SiC) transistor capable of operating at 600°C, using standard ion implantation techniques common in commercial chip fabrication. By employing a bottom-gate structure and double-well isolation, they significantly reduced the gap betwee

Silicon Carbide Transistor High-Temperature Electronics Ion Implantation Power Device Semiconductor Material Fab Process Wide Bandgap Semiconductor Silicon-based Device

Transistor That Operates At 600°C - Mirage News

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www.miragenews.com 2026-08-24

A transistor that operates at 600°C - EurekAlert!

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www.eurekalert.org 2026-08-23

RFHIC First-Half GaN Transistor Sales Jump 75% - thelec.net

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www.thelec.net 2026-08-18

GaN power transistors: What 700 V and 100 V PowerGaN bring to power-supply design - STMicroelectronics

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