Feed Deep Dive Matrix Subscribe About

Semiconductor News & Analysis Feed

20 articles
Trending Companies
AMD9 Intel8 NVIDIA7 TSMC7 Nvidia6 Apple5 Microsoft4 Qualcomm4 Micron4 Samsung4 NXP3 Synopsys3
Trending Technologies
EDA6 Agentic AI4 Blackwell4 FinFET4 Chiplet3 HBM3 Adreno GPU2 Hexagon NPU2 Adreno Neural Fusion2 GDDR72 GDDR62 DRAM2
2026-09-25
High-efficiency 140W USB-C PD reference design powered by GaN transistors - Electropages
0.9
www.electropages.com 2026-09-25
2026-09-24
TechInsights Teardown Confirms TSMC 2nm Nanosheet Transistors Now Inside iPhone 18 Pro - Tech Times
0.95
www.techtimes.com 2026-09-24
TechInsights' September 2026 teardown of the A20 Pro marks a pivotal moment in semiconductor validation: for the first time, TSMC's N2 process claims have been independently confirmed on production silicon. The significance extends far beyond Apple's flagship phone. Every foundry and fabless competi
TSMC2nmNanosheetGAAApple A20 ProChip TeardownProcess NodeMemory Packaging
2026-09-23
Media Alert: Atomera to Highlight Advances in 4F² DRAM Transistors and GaN Devices at SISPAD 2026 - Business Wire
0.95
news.google.com 2026-09-23
2026-09-21
China crafts working 3nm gate-all-around transistors without EUV — stacked nanosheets target 3nm without EUV, but full node remains distant - Tom's Hardware
0.98
www.tomshardware.com 2026-09-21
2026-09-18
China Develops GAA Transistors That Enable 3nm Node-Like Performance On DUV Lithography, But MEOL Constraints Only Provide A Path To 5nm Node-Equivalent Performance - Wccftech
0.95
wccftech.com 2026-09-18
2026-09-16
Interview: Forget transistors — speed is what's choking the chip supply chain, says Qnity exec
0.95
digitimes.com 2026-09-16
2026-09-15
Why 70% of Chip Design Time Is Spent "Finding Errors": A Full Breakdown from Code to Hundred-Billion-Transistor Blueprints - finance.biggo.com
0.9
finance.biggo.com 2026-09-15
2026-09-15
Scaling Thermal Analysis From Transistors To Data Centers
0.85
semiengineering.com 2026-09-15
As semiconductor processes continue to scale, thermal management has become a critical constraint in chip and system design. With increasing heat density in advanced nodes, traditional thermal analysis methods struggle to meet required accuracy. Experts emphasize that thermal analysis has evolved fr
thermal managementchip designmulti-physics modelingadvanced packagingdata centerthermal simulationchip-level thermal analysissystem-level thermal design
2026-09-14
Eggtronic Introduces High-Efficiency 140W USB-C Power Delivery Reference Design Powered by Renesas’ GaN Transistors - EIN News
0.95
www.einnews.com 2026-09-14
2026-09-11
NYCU and TSMC researchers engineer atomic interface to tackle a key transistor bottleneck | Newswise - Newswise
0.95
www.newswise.com 2026-09-11
2026-09-09
Gate-All-Around (GAA) Transistor Market Surges to USD - GlobeNewswire
0.95
www.globenewswire.com 2026-09-09
2026-09-09
Gate-All-Around (GAA) Transistor Market Surges to USD 2,283.00 Million by 2035, at 12.8% CAGR – Report by SNS Insider - Yahoo Finance
0.92
finance.yahoo.com 2026-09-09
The global Gate-All-Around (GAA) transistor market is projected to reach USD 2,283.00 million by 2035, growing at a CAGR of 12.8% from 2026 to 2035, according to a report by SNS Insider. This growth is driven by the industry's shift from FinFET to GAA technology, which offers superior electrostatic
Gate-All-Around TransistorSemiconductor ManufacturingAdvanced Process NodesFinFET Replacement3nm Technology2nm ProcessAI ChipsHigh-Performance Computing
2026-09-08
GaN Power transistors: What 700 V and 100 V PowerGaN Bring to Power-Supply Design - ELE Times
0.95
www.eletimes.ai 2026-09-08
2026-09-07
Enabling Solid-State High-Voltage Power Distribution with Infineon CoolSiC™ JFET Transistors | Tech Guide - allaboutcircuits.com
0.95
www.allaboutcircuits.com 2026-09-07
2026-09-04
Most Read – Cook’s farewell, Hynix NAND fab, GaN-on-Si transistor - Electronics Weekly
0.92
www.electronicsweekly.com 2026-09-04
2026-09-01
New GaN-on-Si transistor withstands nearly 4kV before breakdown - Electronics Weekly
0.9
www.electronicsweekly.com 2026-09-01
2026-09-01
New GaN-on-Si transistor withstands nearly 4kV before breakdown - Electronics Weekly
0.95
news.google.com 2026-09-01
2026-09-01
TSMC Fully Upgrades 3DFabric Platform; CoWoS-Integrated Transistors Projected to Grow 48x by 2029 - finance.biggo.com
0.92
finance.biggo.com 2026-09-01
2026-09-01
EPFL's Charge-Balanced GaN Transistor Blocks 3.4 kV by Taming Electric Field Concentration - XenoSpectrum
0.85
xenospectrum.com 2026-09-01
EPFL's POWERlab has developed a charge-balanced gallium nitride (GaN) transistor on silicon (GaN-on-Si) that achieves a blocking voltage of 3.4 kV. Published in Nature Electronics, this work introduces a dopant-free polarization super-junction (iPSJ) drift region that mitigates electric field concen
GaN transistorcharge balancingGaN-on-Sielectric field concentrationpower semiconductorpower electronicssemiconductor materialsdevice structure design
2026-08-28
New transistor brings high voltage to microchip scale - Tech Xplore
0.95
techxplore.com 2026-08-28