Semiconductor News & Analysis Feed
20 articles
2026-08-20
news.google.com
2026-08-20
2026-07-16
2026-07-16
2026-07-07
2026-07-04
news.google.com
2026-07-04
2026-06-23
simplywall.st
2026-06-23
ROHM (TSE:6963) has recently launched a new series of 80V power MOSFETs for 48V automotive power systems, signaling a strategic shift in its power device portfolio. These devices feature compact HPLF5060 and DFN3333 packages, enhanced thermal dissipation, and AEC-Q101 qualification, with mass produc
2026-06-18
www.indexbox.io
2026-06-18
Gallium nitride (GaN) power devices represent a next-generation semiconductor technology with significant potential in high-voltage applications. This technology leverages superior material properties including high breakdown electric field, high thermal conductivity, and high electron mobility to p
2026-06-18
semiengineering.com
2026-06-18
Gallium nitride (GaN) power devices have made significant progress in low-voltage applications such as consumer electronics chargers. However, high-voltage domains like power generation and transportation remain challenging due to stringent requirements. GaN's superior breakdown characteristics, hig
2026-06-18
semiengineering.com
2026-06-18
Gallium nitride (GaN), as a wide bandgap semiconductor, shows great potential for high-voltage power applications. However, practical implementation faces significant challenges, particularly in material quality, device architecture, and manufacturing processes. While GaN has made notable progress i
2026-06-12
www.ad-hoc-news.de
2026-06-12
Rohm's SCT4013DLL 750V SiC MOSFET is a high-efficiency power device tailored for modern data centers, particularly AI server battery backup units (BBUs) and industrial systems. Built on silicon carbide technology, it offers low conduction losses, high switching frequencies, and compact packaging, ma
2026-06-11
www.indexbox.io
2026-06-11
According to IndexBox's market analysis report, the phosphine precursor market is expected to achieve significant growth by 2035, primarily driven by the rapid development of gallium nitride (GaN) power devices and LED epitaxy technologies. This report provides an in-depth analysis of the current st
2026-06-08
www.marketscreener.com
2026-06-08
ROHM Semiconductor has partnered with AIXTRON to scale in-house gallium nitride (GaN) power device production using the G10-GaN platform. This strategic collaboration leverages AIXTRON's advanced GaN manufacturing technology to enhance ROHM's internal production capabilities for high-efficiency powe
2026-06-08
www.marketscreener.com
2026-06-08
ROHM Semiconductor's strategic partnership with AIXTRON SE represents a significant move in the power semiconductor sector, leveraging the G10-GaN platform to expand in-house gallium nitride device production. This collaboration underscores the growing importance of GaN technology in high-performanc
2026-06-03
www.indexbox.io
2026-06-03
As electricity increasingly replaces fossil fuels across expanding applications, engineers designing systems require switches and power converters capable of handling elevated source voltages and severe short-circuit and overvoltage events. Wide-bandgap semiconductors like gallium nitride (GaN) attr
2026-06-03
semiengineering.com
2026-06-03
Gallium nitride (GaN) power devices are gaining traction due to their high breakdown strength and thermal conductivity, making them ideal for high-power-density applications. However, challenges remain in high-voltage industrial scenarios, particularly in terms of reliability and tolerance for short
2026-06-03
semiengineering.com
2026-06-03
Gallium nitride (GaN) power devices are gaining traction due to their ability to withstand higher voltages, making them attractive for high-power-density applications. The core of GaN devices is the high electron mobility transistor (HEMT), which relies on a GaN/AlGaN heterostructure to form a two-d
2026-06-01
blog.st.com
2026-06-01
STMicroelectronics has introduced the MASTERGAN6 and MASTERGAN7, two new gallium nitride (GaN) power devices designed to accelerate GaN adoption across various applications. These devices integrate low-dropout regulators (LDOs) for both high-side and low-side drivers, eliminating the need for extern
2026-05-21
www.electronicsforyou.biz
2026-05-21
2026-05-19
www.electropages.com
2026-05-19
2026-05-14
www.indexbox.io
2026-05-14