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Infineon has launched new H-DPAK half-bridge devices based on 750V CoolSiC™ G2 technology, expanding its portfolio for automotive and industrial power semiconductor applications. The device features a top-side cooled package that integrates a complete unidirectional half-bridge stage, offering enhan

With the rapid growth of generative AI, data center power consumption is rising sharply, prompting the industry to adopt high-voltage direct current (HVDC) architectures to reduce transmission losses. ROHM's 750V silicon carbide (SiC) MOSFET has been integrated into battery backup units (BBUs) for A

Japanese semiconductor manufacturer ROHM announced on May 21, 2026, that its 750V silicon carbide MOSFET (SiC MOSFET) has been adopted in battery backup units (BBUs) for artificial intelligence (AI) servers. This development reflects the growing demand for high-voltage power conversion as data cente