Infineon launches 750V CoolSiC H-DPAK half-bridge devices - Bisinfotech

Infineon has launched new H-DPAK half-bridge devices based on 750V CoolSiC™ G2 technology, expanding its portfolio for automotive and industrial power semiconductor applications. The device features a... Read original →

Infineon’s 750V CoolSiC G2 H-DPAK half-bridge isn’t just a product launch—it’s a strategic lever forcing upstream SiC substrate suppliers to accelerate 8-inch wafer scale-up and compelling downstream OBC/ESS designers to adopt higher switching frequencies with smaller magnetics. Regulatory tailwinds like the EU’s Net-Zero Industry Act and U.S. IRA subsidies inflate compliance costs, yet Infineon’s German fab base and Malaysian back-end operations grant it superior supply chain resilience versus U.S. and Japanese rivals. In response to Wolfspeed and ROHM’s aggressive pricing in automotive SiC modules, Infineon counters with integrated top-side cooling and wide gate bias tolerance—raising the performance bar beyond pure cost competition. Within 18 months, this device will push 400V EV onboard charger efficiency past 96%, pressuring foundries in Taiwan, China and the Yangtze Delta to rapidly qualify top-cooled packaging processes or risk exclusion from premium e-mobility supply chains.