Semiconductor News & Analysis Feed

Nexperia's expansion of its 650V industrial-grade gallium nitride transistor portfolio represents a significant advancement in power semiconductor technology. As demand grows for high-efficiency power devices in new energy vehicles, industrial power supplies, and renewable energy systems, this move

Nexperia has expanded its 650V industrial-grade high-power gallium nitride (GaN) FET portfolio to meet the growing demand for advanced power conversion applications. The new lineup includes devices with RDS(on) resistances of 35mΩ, 50mΩ, and 70mΩ, available in standard packages such as TO-247-3, TO-

Cambridge GaN Devices (CGD) has introduced a 650V gallium nitride (GaN) integrated circuit designed for automotive applications, aimed at improving electric vehicle (EV) powertrain efficiency. Based on CGD’s ICeGaN technology, the device supports smaller and lighter inverters, contributing to extend