Cambridge GaN Devices’ 650V GaN IC to improve EV powertrain efficiency - New Electronics

Cambridge GaN Devices (CGD) has introduced a 650V gallium nitride (GaN) integrated circuit designed for automotive applications, aimed at improving electric vehicle (EV) powertrain efficiency. Based o... Read original →

CGD’s 650V GaN IC triggers a cascade redesign across the power electronics stack: its ICeGaN architecture eliminates passive matching components, directly shrinking inverter BOM cost and footprint—forcing SiC rivals to accelerate integration. Regulatory shifts like the EU Battery Regulation and U.S. IRA tilt incentives toward localized production, exposing CGD’s fabless reliance on GlobalFoundries to geopolitical scrutiny, especially as 800V architectures dominate. Competitors like Infineon and STMicroelectronics will likely counter with hybrid SiC-GaN solutions, while Navitas and EPC may fortify positions via cross-licensing. Within 18 months, GaN penetration in 400–800V traction inverters will cross a critical threshold—but the real battleground is AEC-Q101 qualification velocity and million-unit reliability data. The first to achieve both will effectively set the next-gen EV powertrain standard.