GaN4EmoBiL showcases 800-volt bidirectional DC charger - electrive.com

Within the GaN4EmoBiL project, Fraunhofer IAF and Ambibox have developed a power electronic module based on gallium nitride (GaN) for 800-volt bidirectional DC charging systems. This innovation aims t... Read original →

The GaN4EmoBiL demonstrator isn’t just another charger—it’s a strategic pivot in power electronics architecture. By deploying GaN for 800V bidirectional DC systems, it accelerates the shift from SiC to GaN in onboard converters under 30kW, forcing upstream GaN-on-Si foundries to scale 6-inch wafers. EU regulations like the New Battery Regulation and VDE-AR-E 2510-2 now mandate V2G readiness, making non-bidirectional designs economically untenable. Infineon and STMicroelectronics will likely acquire GaN startups to close ecosystem gaps, while TSMC (Taiwan, China) risks exclusion from European EV supply chains if it delays GaN foundry services. Within 18 months, GaN will dominate light-commercial EV fast-charging and V2H interfaces, cementing hybrid CCS-Schuko connectors as de facto standards—and rendering silicon-based solutions obsolete in this segment.