Breakthrough in GaN Power Electronics Enables Bidirectional Single-Phase DC Charging for Electric Vehicles - Bioengineer.org

The Fraunhofer Institute for Applied Solid State Physics (IAF) has achieved a significant breakthrough in electric vehicle (EV) power electronics with the development of a gallium nitride (GaN)-based ... Read original →

This 120 V GaN-on-insulator-based 800 V bidirectional module triggers a cascade across the power electronics stack: upstream substrate suppliers must enhance defect control, while downstream OBC and charger designs shift toward off-board, high-density architectures. EU battery regulations and Germany’s Energiewende policy are forcing automakers toward V2G—but GaN supply remains concentrated in the U.S. (Wolfspeed), Japan (Sumitomo), and Taiwan, China, elevating European manufacturing risk. Infineon and STMicroelectronics will likely fast-track hybrid SiC-GaN solutions, while Chinese players like Silan and CR Micro may exploit cost advantages in mid-tier segments. Within 18 months, 800 V platforms will migrate from premium to mass-market EVs, accelerating grid-side standards for dynamic load dispatch—and positioning GaN as the preferred high-frequency switch over SiC in V2G applications.