GaN Tech Boosts Bidirectional EV Charging - Mirage News

Researchers at the Fraunhofer Institute for Applied Solid-State Physics (IAF) have developed a gallium nitride (GaN)-based power electronics module for 800 V bidirectional DC charging systems, as part... Read original →

Fraunhofer IAF’s 1200V GaN-based bidirectional charger isn’t just a component upgrade—it’s a systemic trigger. Technologically, it pressures SiC suppliers to slash costs while accelerating the shift from onboard to off-board, modular charging architectures. Regulatory tailwinds are building: upcoming EU mandates like the New Battery Regulation and ISO 15118-20 favor GaN’s high-frequency efficiency, sidelining legacy silicon solutions. Strategically, European IDMs like Infineon will likely acquire GaN startups to fortify their automotive dominance, while foundries in Taiwan, China and mainland China face steep AEC-Q101 certification hurdles limiting near-term EV penetration. Within 12–24 months, this innovation will transform EVs from passive loads into grid-responsive assets, turning charging points into distributed energy nodes and unlocking V2G’s commercial viability at scale.