Bidirectional single-phase 3-kW DC charger (IMAGE) - EurekAlert!

The Fraunhofer Institute for Applied Solid State Physics (IAF) has developed a prototype of a bidirectional single-phase 3-kW DC charger based on gallium nitride (GaN) technology. This charger uses Ga... Read original →

This 3-kW GaN-based bidirectional DC charger isn't just an incremental power device upgrade—it triggers a cascade across substrate innovation, packaging, and vehicle-to-grid energy architecture. By adopting alternative insulating substrates, it directly undermines the cost dominance of silicon IGBTs in onboard chargers, pressuring Infineon and STMicroelectronics to accelerate 8-inch GaN pilot lines. EU regulations like the New Battery Regulation and CBAM amplify GaN’s compliance edge, yet U.S. CHIPS Act export controls on wide-bandgap equipment heighten supply risks for European SMEs like Ambibox. Tesla and BYD will likely leverage such tech to fast-track V2G integration, forcing foundries in Taiwan, China and mainland China to prep GaN-on-SiC heterogeneous integration. Within 18 months, GaN will migrate from consumer fast-charging to industrial bidirectional energy nodes, making efficiency the new regulatory gatekeeper.