Power module with 1200-V-class GaN transistors (IMAGE) - EurekAlert!

Researchers at the Fraunhofer Institute for Applied Solid State Physics (IAF) have developed a power module based on 1200-V class gallium nitride (GaN) transistors. The module, designed for bidirectio... Read original →

Fraunhofer IAF’s 1200-V GaN power module directly challenges SiC’s dominance in >800V EV platforms. Its insulating substrate not only enhances thermal performance but may redefine epitaxial wafer specs, forcing IDMs to accelerate GaN-on-insulator roadmaps. EU subsidies under the Net-Zero Industry Act amplify its geopolitical compliance edge, while supply chains in Taiwan, China and the U.S. risk cost premiums if they lag in high-voltage GaN packaging. Infineon and Wolfspeed may preemptively ramp pilot GaN lines to contain Fraunhofer’s ecosystem expansion. Within 18 months, shortened automotive GaN qualification cycles and standardized bidirectional architectures will shift Tier1 procurement strategies, triggering a systemic move toward high-frequency, miniaturized e-drivetrains—marking not just a device upgrade, but a paradigm shift in EV energy architecture.