Semiconductor News & Analysis Feed

Toshiba has started test-sample shipments of a 1200V trench-gate SiC MOSFET aimed at power supply systems in AI data centres. The TW007D120E is housed in a QDPAK top-side cooled package and is designed to support higher current capability, improved thermal performance and higher power density in the power stage.

The shift toward 800V high-voltage direct current (HVDC) power architectures in AI data centers is driving a surge in demand for power semiconductors, boosting shipments for Taiwanese lead frame suppliers SDI Corporation and Jih Lin Technology and raising expectations for double-digit revenue growth in 2026.

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