Semiconductor News & Analysis Feed
17 articles
2026-10-01
2026-09-03
2026-08-27
www.azom.com
2026-08-27
This research focuses on critical contamination control technology development in semiconductor manufacturing. As semiconductor process nodes shrink from traditional micrometer-scale to nanometer-level, requirements for particle contamination control in manufacturing environments become increasingly
2026-08-06
2026-07-29
www.azom.com
2026-07-29
This article presents a comprehensive analysis of Raman spectroscopy and photoluminescence characteristics of gallium nitride, which represents a crucial analytical approach in semiconductor materials research. Gallium nitride, as a significant wide-bandgap semiconductor material, finds extensive ap
2026-07-16
2026-07-16
2026-07-13
news.google.com
2026-07-13
2026-07-07
www.azom.com
2026-07-07
In July 2026, Infineon Technologies AG officially opened its Smart Power Fab in Dresden, Germany, marking the world's largest investment in power semiconductors and analog/mixed-signal technologies. With a €5 billion investment, the facility created 1,000 new jobs and doubled Infineon’s production c
2026-07-01
www.azom.com
2026-07-01
Photo-patternable bonding technology is emerging as a critical enabler in advanced device manufacturing, offering integrated adhesion and patterning in a single layer that streamlines traditional processes and enhances material utilization. This approach is particularly valuable in MEMS, sensor manu
2026-06-12
www.azom.com
2026-06-12
Forge Nano has secured an order from a leading photonics technology company to support the manufacturing of advanced integrated photonic devices using its TEPHRA™ semiconductor wafer fabrication platform. This marks growing adoption of Forge Nano's Atomic Layer Deposition (ALD) technology within the
2026-06-09
www.azom.com
2026-06-09
On June 9, 2026, Oxford Instruments, a leading provider of advanced plasma processing solutions for the compound semiconductor industry, announced that its advanced etch technology has enabled ROHM Co., Ltd. to achieve in-house 200mm wafer production of 650V gallium nitride (GaN) power devices. This
2026-06-07
www.azom.com
2026-06-07
This study demonstrates precise control over the composition and atomic distribution in ternary molybdenum-tungsten disulfide monolayers using sub-atomic layer deposition (sub-ALD), offering a promising pathway for the development of future quantum materials and optoelectronic devices. By modulating
2026-06-01
www.azom.com
2026-06-01
This article explores the application of infrared photothermal deflection microscopy (IR PiFM) for characterizing advanced semiconductor structures. As semiconductor devices evolve toward smaller process nodes, their three-dimensional architectures become increasingly complex. Conventional technique
2026-05-15
2026-05-05
2026-05-05