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2026-09-08
Niobium Aluminum Nitride Emerges as a New Candidate for Higher-Density GaN Electronics - globalsources.com
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www.globalsources.com
2026-09-08
2026-09-08
Niobium Aluminum Nitride Emerges as a New Candidate for Higher-Density GaN Electronics - Global Sources
0.95
www.globalsources.com
2026-09-08
2026-09-07
NbAlN: A New Polar Wurtzite Nitride Semiconductor Containing Niobium —Enhancing the interface electron density in GaN-based heterostructures, expanding polarization material and device design— - t.u-tokyo.ac.jp
0.95
www.t.u-tokyo.ac.jp
2026-09-07
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