Semiconductor News & Analysis Feed

EPFL's POWERlab has developed a charge-balanced gallium nitride (GaN) transistor on silicon (GaN-on-Si) that achieves a blocking voltage of 3.4 kV. Published in Nature Electronics, this work introduces a dopant-free polarization super-junction (iPSJ) drift region that mitigates electric field concen

Nexperia's expansion of its 650V industrial-grade gallium nitride transistor portfolio represents a significant advancement in power semiconductor technology. As demand grows for high-efficiency power devices in new energy vehicles, industrial power supplies, and renewable energy systems, this move

Researchers at the Fraunhofer Institute for Applied Solid State Physics (IAF) have developed a power module based on 1200-V class gallium nitride (GaN) transistors. The module, designed for bidirectional DC charging systems, features an insulating substrate and demonstrates high efficiency, power de