EPFL's Charge-Balanced GaN Transistor Blocks 3.4 kV by Taming Electric Field Concentration - XenoSpectrum

EPFL's POWERlab has developed a charge-balanced gallium nitride (GaN) transistor on silicon (GaN-on-Si) that achieves a blocking voltage of 3.4 kV. Published in Nature Electronics, this work introduce... Read original →

EPFL's breakthrough in GaN-on-Si with a dopant-free polarization super-junction achieving 3.4kV blocking voltage marks a pivotal shift in power semiconductor design, eliminating reliance on doping or field plates. This innovation directly impacts upstream material suppliers like Siltronic and downstream module makers such as Infineon and Innoscience, who may accelerate transitions toward GaN-on-Si. From a policy standpoint, global semiconductor autonomy initiatives—especially in the EU and US—will expedite validation and commercialization. In the short term, if long-term stability is confirmed, this tech could rapidly penetrate EV and industrial power markets, particularly in mid-to-high voltage segments (1.5–3kV). Long-term, large-scale production could redefine market dynamics, challenging SiC’s dominance in high-voltage applications.