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EPFL's POWERlab has developed a charge-balanced gallium nitride (GaN) transistor on silicon (GaN-on-Si) that achieves a blocking voltage of 3.4 kV. Published in Nature Electronics, this work introduces a dopant-free polarization super-junction (iPSJ) drift region that mitigates electric field concen

Researchers from École Polytechnique Fédérale de Lausanne (EPFL) have published a technical paper in Nature Electronics titled 'Intrinsic Polarization Superjunctions in III-Nitride Heterostructures for Efficient Power Electronics.' The study addresses key limitations in gallium nitride (GaN)-based p