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EPC targets high-density motion systems with GaN ePower Stage technology
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA — which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications — has introduced the EPC91128, EPC91129, EPC91130 and EPC91131 evaluation boards — compact, high-perform
2026-06-04
natlawreview.com
2026-06-04
The National Law Review
EPC Targets High-Density Motion Systems with GaN ePower™ Stage Technology
EPC Targets High-Density Motion Systems with GaN ePower™ Stage Technology
Press Release Date 06-03-2026
GaN BLDC Inverter Platforms
EPC91128–EPC91131 boards enable rapid BLDC inverter development supporting up to 29 ARMS phase current.
These new inverter evaluation boards represent an important step in making Ga
2026-06-03
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2026-06-03
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2026-06-03
electrive.com
Automobile
GaN4EmoBiL showcases 800-volt bidirectional DC charger
As part of the GaN4EmoBiL project, Fraunhofer IAF and Ambibox have developed a power electronic module based on gallium nitride for bidirectional DC charging systems with 800 volts. A demonstrator will be presented next week at the PCIM trade fair in Nuremberg.
Image: Fraunhofer IAF
By Florian Treiss
03.06.2026 - 16:00
Fraunhofer
2026-06-03
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The Fraunhofer Institute for Applied Solid State Physics (IAF) has unveiled a groundbreaking advancement in electric vehicle (EV) power electronics with the development of a gallium nitride (GaN)-based power electronics module tailored for 800 V bidirectional direct current (DC) charging systems. This innovative module, realized within the GaN4EmoBiL project—an initiative funded by the German Fede
2026-06-03
www.eurekalert.org
2026-06-03
EurekAlert!
NEWS RELEASE 3-JUN-2026
GaN power electronics for bidirectional, single-phase DC electric vehicle charging
Fraunhofer IAF presents innovations at PCIM 2026
Reports and Proceedings
FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS
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IMAGE:
DEMONSTRATOR OF A BIDIRECTIONAL SINGLE-PHASE 3-KW DC CHARGER WITH GAN POWER ELECTRONICS. RESE
2026-06-03
www.miragenews.com
2026-06-03
Mirage News
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03 JUN 2026 10:08 PM AEST
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GaN Tech Boosts Bidirectional EV Charging
Fraunhofer Institute for Applied Solid State Physics
Researchers at the Fraunhofer Institute for Applied Solid State Physics IAF have developed a gallium nitride-(GaN-)based power electronics module for 800 V bidirectional direct current (DC) charging systems. The module is part of the GaN4EmoBiL project ("GaN Power
2026-06-03
www.eurekalert.org
2026-06-03
EurekAlert!
Power module with 1200-V-class GaN transistors (IMAGE)
FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS
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CAPTION
Close-up of the power module developed and manufactured at Fraunhofer IAF, featuring 1200-V-class GaN transistors on an insulating substrate for use in bidirectional DC charging systems
CREDIT
© Fraunhofer IAF
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2026-06-03
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JP Morgan raises ASML estimates as chipmaker signals it can supply far more EUV tools than previously guided
Published: 16:10 03 Jun 2026 BST
JP Morgan has concluded that consensus earnings estimates for ASML Holding N
2026-06-03
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2026-06-03
IndexBox
As electricity takes over from fossil fuels in an expanding range of uses, engineers designing systems need switches and power converters capable of handling both elevated source voltages and more severe short-circuit and overvoltage events. Wide-bandgap semiconductors like gallium nitride (GaN) draw significant attention from device designers because their superior breakdown strength and higher t
2026-06-03
semiengineering.com
2026-06-03
Semiconductor Engineering
New research points to safer devices with less loss at low voltages, but problems remain for high-voltage industrial applications.
As electrical power displaces fossil fuels in more applications, system designers need switches and power converters that can handle both higher source voltages and more demanding short circuit and overvoltage spikes.
Wide-gap semiconductors, such as gallium nitride
2026-06-03
finance.yahoo.com
2026-06-03
Yahoo Finance
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