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DB HiTek has proposed a government-funded model for establishing a public production fab for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors, shifting from previous requests for policy funding toward direct state investment in equipment. The company aims to utilize its 8-inch fa

DB HiTek's decision to delay its SiC and GaN foundry ramp-up reflects the complex challenges facing the semiconductor industry in power device manufacturing. While SiC and GaN materials offer superior performance in high-power, high-frequency applications, their production requires highly sophistica