Silicon carbide technology patent activity remained strong in Q1, says KnowMade - Semiconductor Today

According to a recent report by KnowMade, a technology intelligence and IP strategy consulting firm, patent activity in silicon carbide (SiC) technology remained robust in Q1 2026, across both upstrea... Read original →

China’s surge in SiC patent filings signals a strategic pivot from market capture to technological sovereignty. Intense upstream activity in substrates and epitaxy is accelerating the domestic transition from 6-inch to 8-inch wafers, pressuring global leaders like Wolfspeed and Infineon to co-innovate with equipment vendors. Yet high patent volume doesn’t guarantee manufacturing maturity—crystal defects and yield remain critical bottlenecks. Geopolitically, while foreign firms file aggressively in China for IP protection, they’re erecting ‘technology firewalls’ via partners like ASM International to restrict core know-how leakage. Over the next 12–24 months, Chinese players will likely shape mid-voltage module standards, but Infineon and Toshiba will retain dominance in high-voltage automotive-grade reliability. If global SiC overcapacity arrives early, patents—not pricing—will become the decisive battleground, especially in EVs and solar inverters.