Semiconductor News & Analysis Feed
15 articles
2026-09-11
news.google.com
2026-09-11
2026-08-02
chargedevs.com
2026-08-02
2026-07-30
finance.biggo.com
2026-07-30
As the electric vehicle (EV) industry rapidly evolves toward higher voltage and integrated systems, the on-board charger (OBC), a core power conversion unit, is undergoing a significant technological shift from unidirectional to bidirectional energy storage and from discrete to centralized control.
2026-07-06
news.google.com
2026-07-06
2026-06-16
chargedevs.com
2026-06-16
The collaboration between IAV and Nexperia demonstrates a significant breakthrough in electric vehicle battery management systems using gallium nitride-based bidirectional switching technology. This innovation addresses critical limitations in traditional battery management approaches, offering enha
2026-06-13
2026-06-09
techxplore.com
2026-06-09
2026-06-08
www.asiaresearchnews.com
2026-06-08
A recent study published in *Nature Communications* demonstrates precise bidirectional control over electron spatial arrangement in two-dimensional semiconductors through interface engineering between bismuth (Bi) semimetal thin films and molybdenum disulfide (MoS2), without the need for external vo
2026-06-03
www.electrive.com
2026-06-03
Within the GaN4EmoBiL project, Fraunhofer IAF and Ambibox have developed a power electronic module based on gallium nitride (GaN) for 800-volt bidirectional DC charging systems. This innovation aims to reduce the cost of bidirectional charging by leveraging advanced semiconductor materials, making t
2026-06-03
bioengineer.org
2026-06-03
The Fraunhofer Institute for Applied Solid State Physics (IAF) has achieved a significant breakthrough in electric vehicle (EV) power electronics with the development of a gallium nitride (GaN)-based 800 V bidirectional DC charging module. This innovation, part of the GaN4EmoBiL project funded by Ge
2026-06-03
www.eurekalert.org
2026-06-03
Researchers at the Fraunhofer Institute for Applied Solid-State Physics (IAF) have developed a gallium nitride (GaN)-based power electronics module for 800 V bidirectional DC charging systems, as part of the GaN4EmoBiL project funded by Germany’s Federal Ministry for Economic Affairs and Energy. The
2026-06-03
www.miragenews.com
2026-06-03
Researchers at the Fraunhofer Institute for Applied Solid-State Physics (IAF) have developed a gallium nitride (GaN)-based power electronics module for 800 V bidirectional DC charging systems, as part of the GaN4EmoBiL project funded by Germany's Federal Ministry for Economic Affairs and Energy. The
2026-06-03
www.eurekalert.org
2026-06-03
The Fraunhofer Institute for Applied Solid State Physics (IAF) has developed a prototype of a bidirectional single-phase 3-kW DC charger based on gallium nitride (GaN) technology. This charger uses GaN power semiconductors and alternative insulating substrates, offering advantages such as high effic
2026-06-01
eetimes.com
2026-06-01
As demand for more efficient power solutions continues to rise, designers face increasing pressure to optimize system performance without compromising functionality. This article explores how Gallium Nitride (GaN) Bi-Directional Switches (BDS) can simplify high-voltage power conversion, reducing sys
2026-05-17
www.marketbeat.com
2026-05-17