Semiconductor News & Analysis Feed

Gallium nitride (GaN) power devices represent a next-generation semiconductor technology with significant potential in high-voltage applications. This technology leverages superior material properties including high breakdown electric field, high thermal conductivity, and high electron mobility to p

Gallium nitride (GaN) power devices have made significant progress in low-voltage applications such as consumer electronics chargers. However, high-voltage domains like power generation and transportation remain challenging due to stringent requirements. GaN's superior breakdown characteristics, hig

Gallium nitride (GaN), as a wide bandgap semiconductor, shows great potential for high-voltage power applications. However, practical implementation faces significant challenges, particularly in material quality, device architecture, and manufacturing processes. While GaN has made notable progress i

According to IndexBox's market analysis report, the phosphine precursor market is expected to achieve significant growth by 2035, primarily driven by the rapid development of gallium nitride (GaN) power devices and LED epitaxy technologies. This report provides an in-depth analysis of the current st

As electricity increasingly replaces fossil fuels across expanding applications, engineers designing systems require switches and power converters capable of handling elevated source voltages and severe short-circuit and overvoltage events. Wide-bandgap semiconductors like gallium nitride (GaN) attr

Gallium nitride (GaN) power devices are gaining traction due to their high breakdown strength and thermal conductivity, making them ideal for high-power-density applications. However, challenges remain in high-voltage industrial scenarios, particularly in terms of reliability and tolerance for short

Gallium nitride (GaN) power devices are gaining traction due to their ability to withstand higher voltages, making them attractive for high-power-density applications. The core of GaN devices is the high electron mobility transistor (HEMT), which relies on a GaN/AlGaN heterostructure to form a two-d

STMicroelectronics has introduced the MASTERGAN6 and MASTERGAN7, two new gallium nitride (GaN) power devices designed to accelerate GaN adoption across various applications. These devices integrate low-dropout regulators (LDOs) for both high-side and low-side drivers, eliminating the need for extern