MASTERGAN6 and MASTERGAN7 help democratize GaN power devices thanks to integrated LDOs and new dedicated pins - STMicroelectronics

STMicroelectronics has introduced the MASTERGAN6 and MASTERGAN7, two new gallium nitride (GaN) power devices designed to accelerate GaN adoption across various applications. These devices integrate lo... Read original →

STMicroelectronics’ MASTERGAN6/7 marks GaN’s shift from discrete to highly integrated power stages. By embedding high- and low-side LDOs, these devices eliminate external bias supplies, accelerating GaN adoption in USB-C PD, automotive OBCs, and solar inverters. This integration pressures driver IC and packaging partners to co-develop solutions with higher dV/dt immunity. The -6V negative voltage tolerance strengthens hard-switching topologies in automotive applications under stringent reliability demands. Regulatory tailwinds—like EU ERP and U.S. DOE efficiency mandates—make such high-density designs export-critical, though ST’s reliance on 8-inch GaN-on-Si wafers risks cost volatility amid constrained foundry capacity in Taiwan, China. Competitors like Infineon and Navitas will likely counter with faster-integrated modules and patent-based barriers. Within 18 months, GaN will dominate sub-300W fast charging and begin displacing silicon in industrial and mid-power automotive systems, triggering a structural inflection point.