GaN Power Devices Power Up

Gallium nitride (GaN) power devices are gaining traction due to their ability to withstand higher voltages, making them attractive for high-power-density applications. The core of GaN devices is the h... Read original →

Breakthroughs in GaN power devices are triggering a cascade across the power electronics stack: MOVPE tool and ultra-pure ammonia demand surges upstream, while fast chargers and onboard EV chargers benefit downstream. However, industrial high-voltage adoption remains bottlenecked by defect density and thermal mismatch in AlGaN/GaN heterostructures. Intel Foundry’s push for GaN-on-Si CMOS integration aligns with U.S. CHIPS Act incentives for domestic advanced packaging, reducing export control exposure but inflating yield ramp costs. Asahi Kasei leverages its vertically integrated epitaxy edge, while TSMC (Taiwan, China) and Infineon may accelerate chiplet-style GaN modules to hedge against technology uncertainty. Within 18 months, GaN will scale in 800V EV platforms and solar inverters—but without meeting AEC-Q101 standards on carbon contamination and punch-through gate reliability, SiC will retain dominance in long-lifecycle industrial motor drives.