Semiconductor News & Analysis Feed
1395 articles
2026-05-26
247wallst.com
2026-05-26
24/7 Wall St.
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2026-05-26
finance.yahoo.com
2026-05-26
Yahoo Finance
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2026-05-26
sherwood.news
2026-05-26
Sherwood News
Luke Kawa
12M
Micron soars as UBS more than triples price target to $1,625, predicting a near $2 trillion memory juggernaut
It’s different this time.
That’s the call from UBS analyst Timothy Arcuri, who more than tripled his price target on memory specialist MicronMU $815.46 (-1.48%) to $1,625 from $535. If his view were realized, the company would be worth north of $1.8 trillion.
Shares are su
2026-05-26
www.tradingview.com
2026-05-26
TradingView
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2026-05-26
seekingalpha.com
2026-05-26
Seeking Alpha
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2026-05-26
www.tomshardware.com
2026-05-26
Tom's Hardware
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2026-05-26
www.blocksandfiles.com
2026-05-26
Blocks & Files
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2026-05-26
www.investing.com
2026-05-26
Investing.com
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2026-05-26
ca.investing.com
2026-05-26
Investing.com Canada
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2026-05-26
overclock3d.net
2026-05-26
OC3D
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2026-05-26
www.awazthevoice.in
2026-05-26
Awaz The Voice
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2026-05-26
www.chosun.com
2026-05-26
조선일보
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2026-05-26
vir.com.vn
2026-05-26
Vietnam Investment Review - VIR
SEOUL, South Korea, May 26, 2026 /PRNewswire/ -- SK hynix Inc. (or "the company", www.skhynix.com) announced today the launch of the iHBM solution that embeds integrated cooling elements(ICEs)[1] within the high-bandwidth memory(HBM) package for next-generation HBM products.
[1] ICE(Integrated Cooling Elements): A cooling element made of electrically non-conductive, thermally conductive silicon-b
2026-05-26
www.asiae.co.kr
2026-05-26
아시아경제
Equipped with Cooling Component (ICE) Inside HBM Package
Over 30% Reduction in Thermal Resistance
Proven MR-MUF Process Applied
Amid the artificial intelligence (AI) boom, a game-changer has emerged to tackle the biggest challenge in semiconductor high-density integration: the 'heat generation' issue.
On May 26, SK hynix unveiled its next-generation memory technology, 'iHBM,' which maximize
2026-05-26
www.asiae.co.kr
2026-05-26
아시아경제
Equipped with Cooling Component (ICE) Inside HBM Package
Over 30% Reduction in Thermal Resistance
Proven MR-MUF Process Applied
Amid the artificial intelligence (AI) boom, a game-changer has emerged to tackle the biggest challenge in semiconductor high-density integration: the 'heat generation' issue.
On May 26, SK hynix unveiled its next-generation memory technology, 'iHBM,' which maximize
2026-05-26
digitimes.com
2026-05-26
Kioxia is targeting 2027 production of its 10th-generation BiCS 10 NAND, a move that could help the Japanese memory maker narrow its technology gap with Samsung Electronics and SK Hynix as the South Korean rivals delay investment in their own next-generation NAND technologies, according to ZDNet Korea.
2026-05-26
digitimes.com
2026-05-26
Powerchip announced it will present a "3D AI Foundry" showcase at COMPUTEX 2026 to demonstrate 3D wafer-on-wafer (WoW) DRAM stacking, interposers, and Si-cap integrated passive devices as part of an end-to-end offering for AI chips, addressing rising demand for GenAI and high-performance computing for memory capacity, bandwidth, and energy efficiency. The firm said it is leveraging its combined lo
2026-05-26
digitimes.com
2026-05-26
As Micron Technology's decision to restart large-scale DDR4 production in the US grabs global attention, memory-chip executives and analysts say the move is less a revival of aging technology than a strategic reshuffling of supply aimed at safeguarding critical American industries.
2026-05-26
digitimes.com
2026-05-26
Samsung Electronics is reportedly preparing to allocate much of its Pyeongtaek P4 cleanroom capacity to next-generation high-bandwidth memory (HBM) in 2027, a move that could tighten the supply of general-purpose DRAM as memory makers shift more production toward higher-value AI server products.
2026-05-26
digitimes.com
2026-05-26
The race to dominate next-generation NAND flash memory has long been measured in layers — and Samsung Electronics appears to be pulling ahead. The South Korean chipmaker has reportedly developed a 900-layer-class V-NAND prototype, a significant leap that brings the memory industry closer to the 1,000-layer threshold as chipmakers intensify efforts to pack more storage into smaller chips while cutt