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Gallium nitride (GaN) power devices represent a next-generation semiconductor technology with significant potential in high-voltage applications. This technology leverages superior material properties including high breakdown electric field, high thermal conductivity, and high electron mobility to p

Microchip Technology has introduced a new range of 3.3 kV silicon carbide (SiC) power modules aimed at enabling high-voltage applications, particularly in next-generation data centers and solid-state transformer (SST) designs. These modules integrate 3.3 kV SiC MOSFETs and Schottky diodes in a stand