Microchip unveils 3.3 kV SiC power modules for high-voltage applications - New Electronics

Microchip Technology has introduced a new range of 3.3 kV silicon carbide (SiC) power modules aimed at enabling high-voltage applications, particularly in next-generation data centers and solid-state ... Read original →

Microchip’s 3.3 kV SiC power modules signal a decisive shift toward medium-voltage direct conversion in AI data centers. Technically, this pressures upstream SiC substrate suppliers to ramp 6-inch+ wafer yields while accelerating downstream solid-state transformer (SST) designs toward higher switching frequencies and compactness. On compliance, tightening U.S. export controls on wide-bandgap semiconductors—coupled with EU carbon tariffs—force firms to reconfigure global assembly/test footprints, weighing capacity between Taiwan, China and Southeast Asia. Competitively, Wolfspeed and Infineon will likely accelerate HV module roadmaps or lock in Tier-1 system integrators preemptively. Within 18 months, adoption by major cloud providers could trigger a DC distribution standard war, marginalizing legacy AC-DC architectures and pushing SiC penetration from under 15% to over 30%.